Two new briarane-related diterpenoids, designated as excavatoids E (1) and F (2), were isolated from the cultured octocoral Briareum excavatum. The structures of compounds 1 and 2 were established on the basis of extensive spectral data analysis. Briaranes 1 and 2 were found to exhibit moderate inhibitory effects on elastase release by human neutrophils.

Drain-extended FinFET transistors for RF power applications have been fabricated and is presented in this paper. Power FinFETs with a wide drain extension are proposed to reduce the drain resistance. Compared with conventional drain-extended FinFETs, our proposed new devices exhibit lower on-resistances and better high-frequency performances while keeping a similar breakdown voltage. The enhancements of the on-resistance and peak cutoff frequency are 16 and 56%, respectively, under an optimal drain-extension layout. These experimental results suggest that FinFET transistors with a wide drain extension could be used for RF power applications, increasing the possibility of integrating RF power parts into future FinFET system-on-a-chip technologies.

In this paper, we present the dc and high-frequency characteristics of trigate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) for RF applications. Trigate TFTs were fabricated using a 3D-IC process and designed with a multi-finger gate and multi-channel configuration. To obtain an optimal device design guideline, different source/drain (S/D) extension dimensions and channel layouts are investigated. We find that devices with a shorter or wider extension have higher cutoff frequencies (fT) and maximum oscillation frequencies (fmax) owing to their lower S/D resistances. In addition, the high-frequency performance can be further improved by adopting the tapered channel structure, where the channel width increases gradually from the source to the drain. For the optimal device designs, the values of fT and fmax are around 25 GHz and 30 GHz, respectively. The high fT and fmax as well as excellent gate controllability in our devices indicate the trigate poly-Si TFT could be a suitable candidate for low-cost RFIC applications.

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