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The green Zn2SiO4:Mn 2+ phosphor film for electroluminescence (EL) was fabricated through a thermal annealing process of spin coated film on n-type silicon wafer as a semiconductor electrode. The oxide phosphor was placed in metal-oxidesemiconductor (MOS) structure, where indium tin oxide was used as a top transparent electrode. The EL device showed the high-purity green emission spectrum at 525 nm. Its luminancevoltage and frequency dependence showed the increasing trend up to 100 V and 1 kHz.