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Far-infrared transmission through normal-state films of V3Si, Nb3Ge, and Nb has been measured between, 30 and 310 cm '. The data for V3Si followed the Drude model at low frequencies with constant scattering time and plasma frequency, but led to frequency-dependent Drude parameters above 150 -240 cm . This behavior is interpreted as arising from electron-phonon and impurity scattering effects, with the latter exhibiting a frequency dependence due to the variable electronic density of states. Nb36e also displayed high-frequency deviations from the Drude model whereas Nb did not. These characteristics are consistent with the electron-phonon behavior of each material. For V3Si, Nb3Ge, and Nb, respectively, the impurity scattering times were found to be 3.7&&10 0.7X10 '", and 1.0/10 ' sec and the bare plasma frequencies were determined as 2.9, 4.0, and 10 eV.

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