No abstract

The one-dimensional Ising model with general spin S has been formulated as an eigenvalue problem of order 2S + 1. Two methods to reduce the order to [S + 1] have been developed for calculating the energy and the susceptibility at zero external field. Exact solutions for S = 32 and S = 1 have been obtained. Numerical calculations of S = 32, 1, and ½ have been compared.

It is shown that a-c powder EL deterioration is closely related to sulfur vacancy in the phosphor and the phosphor crystal quality, by measurement of ESR spectrum and x-ray diffraction pattern. The EL phosphor life is improved with a decrease in the sulfur vacancy density in the phosphor. It is further improved with a decrease in the x-ray diffraction (111) peak intensity of the phosphor. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.210.126.199 Downloaded on 2015-05-31 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.210.126.199 Downloaded on 2015-05-31 to IP Vol. 130, No. 11

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UV -stimulated photocurrent spectroscopy and photocurrent transient methods have been used to determine the effects of deposition parameters on the electron trapping level density and its energy distribution in rf-sputtered TazOs films. Results of this investigation indicate that the electron trapping level density can be greatly reduced by depositing the film at a pressure of 2X 10-3 Torr with an rf-magnetron sputtering system. Experimental results also indicate the presence of the distribution for traps peaked at 2.7 e V below the conduction band in TazOs films sputtered at a pressure of2 X 10-3 Torr. A first-order kinetic model was used to compute trapping parameters (trap density and photoionization cross section). The results of this analysis indicate that the density of the 2.7 eV level is on the order of 4X lOIS cm-3 , which is three orders of magnitude lower than that for anodic TazOs films, and that the photoionization cross section (at 2.7 eV) is on the order of 1O-z0 cm z .