High speed rectifiers that can be fabricated at low cost whilst still maintaining a high performance are of interest for wireless communication applications. In this letter amorphous indium gallium zinc oxide (a-IGZO) has been used with adhesion lithography (a technique to create asymmetric planar electrodes separated by a nanogap) to fabricate high performance Schottky diode rectifiers. The diode area and junction capacitance can be significantly reduced using this technique, improving device cutoff frequencies. Devices of different widths have been fabricated showing rectification ratios between 10 3-10 4. Capacitances measured for devices of various sizes were all on the order of 0.1 pF. By applying ac signals to the diode and measuring the output voltage across a load resistor a cutoff frequency was found. a-IGZO diodes with an extrinsic cutoff frequency of 6.4 GHz at a 15 dBM input power have been realized. The devices also show good air stability with little change in current-voltage characteristics after 12 months.

External electro-optic measurement utilizing poled polymer-based asymmetric Fabry-Perot reflection film Device fabrication and experimental results are reported for a reflectance modulator in which coupling between a 632.8 nm laser beam reflected from the base of a prism and a guided mode in an electro-optic polymer is electrically varied. The beam intensity was varied *31% by application of 46 V rms across the polymer. The response is independent of frequency up to at least 5 MHz. 29

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