Recrystallization processes in polycrystalline silicon made by a chemical vapor deposition technique have been investigated. Primary recrystallization has been observed between 1150 and 1250 °C, secondary recrystallization occurred above 1350 °C. By this procedure, grains of about 100 μm have been obtained. Recrystallized silicon can in principle be used as a substrate for making relatively inexpensive solar cells.
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