bending, fracture initiates at such flaws, allowing the determination Room-temperature fracture of controlled surface flaws in s i c after annealing exposure is sensitive to annealing environment. Behavior correlates with the active/passive nature of the oxidation process. Flaw healing occurs for annealing exposures in air. Roomtemperature K I C values are sensitive to environment and increase High-temperature K Ic values for the present S i c decrease with increasing temperature, reflecting a decrease in y with increasing temperature. Acknowledgment:The writers acknowledge informative discussions with J.W . Hinze, Systems Research Laboratories, Dayton, Ohio, concerning the oxidation behavior of Sic. , "Brittle Materials Design, High with increasing annealing temperature. 1973.Silicon Nitride at Elevated Temperatures," J. Marer. Sci., 9 [2] 270-78 (1974). Auger spectroscopy and ion beam milling were used to determine surface compositional profiles on a series of bioglass implant materials after exposure to simulated body conditions.Four glasses were examined, a soda-lime-silica glass and 3 compositions produced by adding 3,6, and 12 wt% PZOS to the ternary glass. An SiOz-rich layer is formed on the surface of all glasses investigated. ASPZOS is added to the bulk composition, a second film rich in Ca and P forms at the SiOz-rich film-water interface. The rate of formation of the Ca-P film increases as the P z O~ content of the bulk glass increases. When glasses are corroded under identical conditions, the thickness of the Ca-P layer increases as the PZOS content of the bulk composition is increased.

Effect of Ar post-oxidation annealing on oxide-4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy J. Vac. Sci. Technol. A 23, 298 (2005); 10.1116/1.1865153Effect of oxidation and reoxidation on the oxide-substrate interface of 4H-and 6H-SiC Appl.

The analysis of the bonding interface between hip prostheses and bone after functional use in animals was carried out. Scanning electron microscopy (SEM) with energy dispersive analysis (EDX), and Auger electron spectroscopy were used to evaluate the bonding interface. Various methods of postsacrifice sample preparation were used to evaluate the effect of such different methods on the analysis of the bonding interface. Comparison of the results with several rat tibia implant experiments is also presented.