This paper deals with the role of epitaxial strain on the structure and electronic transport properties of metastable SmNiO3 layers grown by metal-organic chemical vapor deposition onto SrTiO3 and LaAlO3 substrates. The characterization of these layers is carried out by high resolution x-ray diffraction and four-probe resistivity measurements. It is found that the SmNiO3 phase is stabilized by in-plane compressive strain whereas in-plane tensile strain induces the creation of oxygen vacancies that induces an annihilation of the metal-insulator transition and a huge increase of the resistivity