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We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with 111-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Ah03/GaAs process for III-V MOS.

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