Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO 2 (100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V f) of 6V with a series resistance of 2.2 × 10 5 Ω.

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We describe that an elastomeric stamp of poly(dimethylsiloxane) (PDMS) can modify the surface energy of some surfaces when brought into conformal contact with the number of stamping. We focus on an increase of the hydrophobicity of the patterned surface due to diffusion of low molecular weight (LMW) silicone polymer chains. The transfer of PDMS to the surface during patterning is relevant to and calls for attention by those who are using this method in applications where control of the surface chemistry is of importance for the application.

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