Data from electronic Raman spectroscopy are employed to calculate temperature dependent magnetic susceptibilities for terbium aluminum garnet, terbium gallium garnet, europium gallium garnet, thulium aluminum garnet, and thulium gallium garnet. An electronic Raman spectrum of terbium gallium garnet is reported, as are newly observed electronic levels in thulium gallium garnet.

The theory of a new Raman effect is presented where changes occur in the electronic and vibrational quantum numbers. Theory predicts that such an effect is governed by trace scattering and to first order only totally symmetric vibrations are involved. The experimental data are in good agreement with the theoretical predictions.

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Aus den Ergebnissen der elektronischen Raman‐Spektren werden die Temperaturabhängigkeiten der magnetischen Suszeptibilitäten für Tb ‐Al‐, Tb ‐Ga‐, Eu‐Ga‐, Tm ‐Al‐ und Tm‐Ga‐Granate berechnet.