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Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 x 2 crosspoint .switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating 1nP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at -1 GHz.

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