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Thermal stability and failure mechanisms of Au/TiW(N)/Si and Au/TiW(N)/SiO2/Si systems have been studied by both conventional and high-resolution transmission electron microscopy, X- ray diffraction and Auger electron spectroscopy. For films deposited in Ar gas containing 20% N2, a single face-centered-cubic phase was the only crystalline phase detected to form. The samples were found to remain stable after annealing at 700 °C for 30 min. The stability temperature for Au/TiW(N)(Ar:N2=80:20)/SiO2/Si samples was found to be higher than those of Au/TiW(N) (Ar:N2=90:10)/SiO2/Si and Au/TiW/SiO2/Si samples.