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The use of a fourparameter MOS model to characterize drain current mismatch is discussed. Guidelines for the accurate and repeatable measurement of transistor parameter mismatch are presented, along with two extraction methodologies based upon these guidelines. Parameter mismatch measurements made on 430 NMOS and 430 PMOS transistor pairs Eabricated in a 0.8/rm proceea are used to predict the drain current mismatch of the same population of transistors, and comparisons are made between the predicted and measured values.