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a), P. SIEFERT (a), P. HOSCHL (b), P. MORAVEC (b), and M. VANI%EK (b) Cadmium telluride crystals doped with germanium are grown by the THM technique and the presence of deep levels is investigated by TSC and constant photocurrent methods. Both indicate the presence of a level at E v + 0.73 eV having a high capture cross section of u = 3.4 x 10-15 cmz; the material is semi-insulating but gives no response when used as nuclear y-detector. Kadmiumtelluridkristalle dotiert mit Germanium werden mittels THM-Technik gezogen und mittels TSC-und Photostrommethoden die Anwesenheit tiefer Niveaus untersucht. Beide ergeben die Anwesenheit eines Niveaus bei E , + 0,73 eV mit hohem Einfangquerschnitt CT = 3,4 x x 10-18 cm2; das Material ist halbisolierend, ergibt jedoch keine Response bei Benutzung als y-Detektor.

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Thermally stimulated current (TSC) measurements have been performed in high resistivity (ϱ ≈ 107 ωcm) CdTe γ‐ray detectors between 35 and 300°K. The TSC curves have been analysed by different methods, including those taking into account the retrapping of the carriers. The traps characteristics have been determined; especially three levels located at Ev + 0.13 eV, Ev + 0.30 eV, and Ec − 0.55 eV have been investigated.