We have performed low temperature magnetoresistance measurements of the two-dimensional electron system (2DES) in an inversion layer on p-type InAs. In high magnetic fields perpendicular to the 2DES beating patterns in Shubnikov-de Haas oscillations are observed from which the Rashba spin-orbit interaction parameter is determined. In the low-field regime we perceive weak localization and antilocalization. By fitting to the gathered localization data the elastic, inelastic, and spin relaxation times as well as coherence lengths for diffusive transport are determined for different applied gate-voltages. The Rashba parameter determined from these relaxation times is compared to the values obtained from the high-field Shubnikov-de Haas oscillations.

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