C. Texier-Hervo scite author profile

Oans cet article, sont prBsentBs des rBsultats d'une Btude par microscopie electronique en transmission de joints de grains Blectriquement actifs (et inactifs) dans des Bchantillons de silicium polycristallin 6laborBs par la methode RAD. Les joints de grains dans les dchantillons extraits aprhs plusieurs metres de tirage ne sont pas caractCrisBs par des relations de macles parfaites. De nombreux prdcipitbs apparaissent dans les joints proches de la surface libre.

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Influence of carbon and hydrogen segregation on the electrical properties of grain boundaries in polycrystalline silicon sheets

Rallon

Aucouturier

Texier-Hervo

et al. 1983

Solar Cells

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Continuous Growth of Thin Polysilicon Sheets on a Temporary Carbon Shaper by the R.A.D. Process

Texier-Hervo

Mautref

Belouet

et al. 1982

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Impurity Incorporation in R.A.D. Polysilicon Layers and Consequences on their Electrical Properties

Revel¹,

Deschamps²,

Deville³

et al. 1982

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C. Texier-Hervo

Growth of polysilicon sheets on a carbon shaper by the RAD process

Tem and Ebic Investigations of Polycrystalline Silicon Sheets Grown by the Rad Growth Process

Influence of carbon and hydrogen segregation on the electrical properties of grain boundaries in polycrystalline silicon sheets

Continuous Growth of Thin Polysilicon Sheets on a Temporary Carbon Shaper by the R.A.D. Process

Impurity Incorporation in R.A.D. Polysilicon Layers and Consequences on their Electrical Properties

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