C van Dinther scite author profile

Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

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C van Dinther

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

Accuracy assessment of the BSIM3v3 MOSFET compact model for large signal RF applications

Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

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