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We report solution-processed ZnO thin-film transistors (TFTs) on a flexible substrate, using polymethylmethacrylate (PMMA) as a dielectric layer. To improve the compatibility between the ZnO active layer and the PMMA dielectric, an O 2-plasma treatment has been applied to the PMMA dielectric. The structural and electrical characteristics of the ZnO-TFTs, which have different channel morphologies produced by various concentrations of the ZnO solution, were investigated. The ZnO trap centers of the ZnO-TFTs were decreased as the concentration of the ZnO solution increased. The ZnO-TFT with the optimized channel morphology exhibited a high field-effect mobility of 7.53 cm 2 V −1 s −1 .

We report bright white-light electroluminescence (EL) from a diode structure consisting of a ZnO nanorod (NR) and a p-type conducting polymer of poly(fluorine) (PF) fabricated using a hydrothermal method. ZnO NRs are successfully grown on an organic layer of PF using a modified seeding layer. The EL spectrum shows a broad emission band covering the entire visible range from 400 to 800 nm. White-light emission is possible because the ZnO-defect-related emission from the ZnO NR/PF heterostructure is enhanced to become over thousand times stronger than that from the usual ZnO NR structure. This strong green-yellow emission associated with the ZnO defects, combined with the blue PF-related emission, results in the white-light emission. Enhancement of the ZnO-defect emission is caused by the presence of Zn(OH)(2) at the interface between the ZnO NRs and PF. Fourier transform infrared spectroscopy reveals that the absorption peaks at 3441, 3502, and 3574 cm(-1) corresponding to the OH group are formed at the ZnO NR/PF heterostructure, which confirms the enhancement of defect emission from the ZnO NR/PF heterostructure. The processing procedure revealed in this work is a convenient and low-cost way to fabricate ZnO-based white-light-emitting devices.

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