Novel N, S co-doped graphene (NSG) was prepared by annealing graphene oxide with thiourea as the single N and S precursor. The NSG electrodes, as efficient metal-free electrocatalysts, show a direct four-electron reaction pathway, high onset potential, high current density and high stability for the oxygen reduction reaction.

GDNWs (graphdiyne nanowires) have successfully been constructed which exhibit a very high quality defect-free surface using the VLS growth process. Measurement of electrical properties showed that the GDNWs produced are excellent semiconductors with a conductivity of 1.9 × 10(3) S m(-1) and a mobility of 7.1 × 10(2) cm(2) V(-1) s(-1) at room temperature. The results have confirmed that GDNW is indeed a promising and key novel material in electronic and photoelectric fields for both fundamental and potentially practical applications.

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