We present a novel Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) based on GaInNAs for 1.3 µm operation and GaAs for 0.85 µm operation using longitudinal transport of carriers along the p and n layers of the junction containing the quantum wells. The device eliminates the need for ring contacts, transport through the DBR layers and hence requires no-doping in the DBRs..
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