We manufacture an ultra-narrow border of TFT-LCD with incell touch function. For the narrow border panel, we using One Third Source line Driving(OTSD) and Tracking Gate line in Pixel(TGP) technology. We set new shift register (S/R) circuit at the top side border of display. And we combine the new S/R and TGP technology to make an ultra-narrow border mobile phone panel. By OTSD technology, we set the gate lines in the area that is source lines originally, and keep the aperature ratio at the same time. A 5 inch FHD untra-narrow border(0.35mm) with in-cell touch fuction display was demonstrated.

High performance a‐Si:H TFT with properly SiNx deposition and low deposition rate of a‐Si:H for high stability has been improved. Otherwise, large device dimension accompany milliamperes current caused joule heating degradation device reliability. Fine design for promoting reliability for self‐heating reduction was also investigated. Square‐like a‐Si:H active layer induces higher turn‐on current than rectangular‐like one degraded the device reliability. Applied the good performance TFTs to driver application is good enough for high temperature of 85 °Coperation.

Highly flexible electrophoretic display with gate driver circuits integrated was demonstrated. Beginning from the essential components such as TFTs, resistors and capacitors, the authors finally design a GOA-embedded display which can withstand 10,000 rolling cycles of 20 mm radius without any line defect and optic performance degradation.