Articles you may be interested inLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology J. Vac. Sci. Technol. A 32, 031506 (2014); 10.1116/1.4868215Electron/phonon coupling in group-IV transition-metal and rare-earth nitridesIn situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (a-Al 2 O 3 ) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates. V C 2013 AIP Publishing LLC. [http://dx.

A tunneling spectroscopy study is presented of superconducting MoN and Nb 0.8 Ti 0.2 N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported T c values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ∼10%) were obtained using an artificial tunnel barrier of Al 2 O 3 on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 10 6 A/cm 2 at T = 0.8T c for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.Superconducting nitride alloys make excellent candidates for device applications due to their relatively high critical temperature and stability at ambient atmosphere. These characteristics suggest the opportunity for increased performance and efficiency over commonly used niobium. However, challenges and limitations in common fabrication techniques can reduce the application possibilities. Reactive magnetron sputtering is the most commonly used deposition technique that has produced high quality superconducting thin films of niobium based nitrides.1-3 While molybdenum based superconducting nitrides have also been achieved through sputtering 4 or chemical solution 5 techniques, they require a high temperature (≥700• C) and/or high pressure annealing process to achieve a critical temperature greater than that of niobium. Various other techniques such as chemical vapor deposition, 6 pulsed laser deposition 7 and molecular beam epitaxy 8 have produced superconducting molybdenum nitrides, but have failed to even reach 9K. Sputtering methods are generally limited to planar geometries making it very difficult for complex geometry applications such as superconducting radio-frequency (SRF) cavities or superconducting magnets. Additionally, for applications requiring thin pin-hole free insulating barriers such as superconductorinsulator-superconductor (SIS) tunnel junction mixers for terahertz frequencies, 9 sputtering processes can be quite challenging.Atomic layer deposition (ALD) is a highly scalable technique that utilizes sequential self-limiting surface chemical reactions to deposit material in a layer-by-layer a) Electronic mail: ngroll@anl.gov b) Electronic mail: proslier@anl.gov fashion.10,11 ALD provides several advantages over traditional growth methods, including atomic-scale uniformity over large areas, unmatched conformity over complexshaped substrates, and deposition temperatures well below those often required by other techniques. ALD has previously demonstrated the ability to grow superconducting films 12 and nitride based thin films in...

HypervirulentKlebsiella pneumoniae(hvKp) can cause life-threatening community-acquired infections among healthy young individuals and is thus of concern for global dissemination. In this study, a mouse model of acute primary hvKp pneumonia was establishedviaaerosolized intratracheal (i.t.) inoculation, laying the foundation for conducting extensive studies related to hvKp. Subsequently, a time-course transcriptional profile was created of the lungs from the mouse model at 0, 12, 24, 48 and 60 hours post-infection (hpi) using RNA Sequencing (RNA-Seq). RNA-Seq data were analyzed with the use of Mfuzz time clustering, weighted gene co-expression network analysis (WGCNA) and Immune Cell Abundance Identifier for mouse (ImmuCellAI-mouse). A gradual change in the transcriptional profile of the lungs was observed that reflected expected disease progression. At 12 hpi, genes related to acute phase inflammatory response increased in expression and lipid metabolism appeared to have a pro-inflammatory effect. At 24 hpi, exacerbation of inflammation was observed and active IFN-γ suggested that signaling promoted activation and recruitment of macrophages occurred. Genes related to maintaining the structural integrity of lung tissues showed a sustained decrease in expression after infection and the decrease was especially marked at 48 hpi. TNF, IL-17, MAPK and NF-kB signaling pathways may play key roles in the immunopathogenesis mechanism at all stages of infection. Natural killer (NK) cells consistently decreased in abundance after infection, which has rarely been reported in hvKp infection and could provide a new target for treatment. GenesSaa1andSlpiwere significantly upregulated during infection. BothSaa1, which is associated with lipopolysaccharide (LPS) that elicits host inflammatory response, andSlpi, which encodes an antimicrobial protein, have not previously been reported in hvKp infections and could be important targets for subsequent studies. To t our knowledge, this paper represents the first study to investigate the pulmonary transcriptional response to hvKp infection. The results provide new insights into the molecular mechanisms underlying the pathogenesis of hvKp pulmonary infection that can contribute to the development of therapies to reduce hvKp pneumonia.