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Introduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

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Two techniques for detecting point targets in hyperspectral imagery are described. The first technique is based on the principal component analysis of hyperspectral data. We combine the information of the first two principal component analysis images; the result is a single image display "summary" of the data cube. The summary frame is used to define image segments. The statistics, means and variances, of each segment for the principal component images is calculated and a covariance matrix is constructed. The local pixel statistics and the segment statistics are then used to evaluate the extent to which each pixel differs from its surroundings. Point target pixels will have abnormally high values. The second technique operates on each band of the hypercube. A local anti-median of each pixel is taken and is weighted by the standard deviation of the local neighborhood. The results of each band are then combined. Results will be shown for visible, SWIR, and MWIR hyperspectral imagery.