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A parallel coupled‐line microstrip filter is designed and implemented on PCB with its maximum bandwidth. In this paper, this filter has presented almost very good characteristics including the simulated bandwidth of 67%, the measured bandwidth of 64%, lower insertion loss of 1.27 dB, and flat response in the pass‐band. The maximum bandwidth fabricated on PCB shows good agreement with the theoretically calculated bandwidth of 70% due to the narrower gap size between the coupled lines. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 373–375, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21353

High-performance passive RF devices were fabricated on insulating plastic substrates. These passive devices included inductors, low-loss coplanar waveguide (CPW) and microstrip transmission lines, 30 GHz narrow-band filters, and 25 GHz CPW ring resonators. The characteristics of these devices agreed well with those of ideal devices, as predicted by electromagnetic simulations.

CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor (MOS) structure with improved tuning range and quality factor. In this work, the high Q‐factor 24 and 21, wide tuning ratio 45% and 36% can be achieved by 65 nm low power technology n+/n‐well and p+/p‐well MOS varactor up to 10 GHz, respectively. Meanwhile, the equivalent circuit model, to model intrinsic and extrinsic parameters of MOS varactor, also have demonstrated that parasitic resistance is a main issue to dominate Q‐factors, and the measured flicker noise result of MOS varactor is directly dependant on gate leakage current. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2119–2121, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24567