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Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variation, backside junction formation and dielectric film structure, thermal annealing and so on. It is demonstrated that with the optimized key process, a high performance 0.9um BSI pixel with low noise can be fabricated.

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