We employed a 5.8 GHz microwave annealing (MWA) to electrically activate the doped hydrogenated amorphous silicon (a-Si:H) thin films on glass. As compared with traditional rapid thermal annealing (RTA), MWA can electrically activate better the doped a-Si films at low annealing temperature and short processing time and effectively reduce their resistivity. The longer annealing time for MWA is better.
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