High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The transprojected-range effect Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon Carbon ion implantation was employed to annihilate the end-of-range ͑EOR͒ defects in Ge ϩ -pre-amorphized Si. Experimental results showed that the efficiency of EOR defect removal depends on the Ge ϩ -pre-amorphization conditions, the location of projected range (R p ) of carbon implant and subsequent annealing conditions. The best defect removal occurred when R p of carbon implantation was brought close to the amorphous/crystalline ͑a/c͒ interface generated by Ge ϩ -pre-amorphization. The higher the annealing temperature, the better the interstitial gettering efficiency of carbon atoms was observed. However, transmission electron microscopy investigation revealed the emergence of hairpin dislocations when dose and accelerating voltage of Ge ϩ implantation were high. In specimens without carbon implantation, the hairpin dislocations could be readily removed by a 900°C, 30 min anneal. For carbon-implanted specimens, the density of hairpin dislocations increased when R p of carbon implantation was close to the ͑a/c͒ interface. The glide motion of hairpin dislocations was affected by Ge ϩ -pre-amorphization conditions and was inhibited by the SiC complexes formed in the vicinity of dislocations so that they became rather difficult to anneal out of the specimens.
The lateral diffusion of dopants in silicides has been studied using a new and sensitive Schottky barrier test structure that relies on changes in the I-V characteristics of silicidelsilicon interfaces due to dopant diffusion from a doped silicide into silicon. The test structure has been used to determine the diffusivity of As and B in WSiz and Ti&. The diffusion process is modeled as a 1-D diffusion from a constant concentration dopant source. The diffusivity of B and As in WSiz is found to be 1.0 x exp [ = # I cmz/sec and 2.6 exp [*] cm2/sec respectively. The diffusivity of As in TiSiz is 4.8 exp ( 9 1 cm2/sec. No measurable lateral diffusion of B in has been obsetved. The process flow of the test structure makes the device readily adaptable to other deposited or reacted silicides.
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