Ferroelectric PZT thin films were deposited on Pt and SrRuO 3 substrates in a cold-wall reactor, using the Pb(C 2 H 5 ) 4 /Zr(OBu) 4 /Ti(OPr i ) 4 /O 2 reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO 3 . Lead content of the thin film deposited on either substrate at low temperatures (723-863 K) was much more temperature dependent than the other two metal contents. The strong temperature dependence originated from the high activation energy in the initial decomposition of Pb(C 2 H 5 ) 4 vapor, which was 54 kcal/mol. The surface reaction constant of lead precursor had much lower temperature dependence. The activation energy of surface reaction for PbO, estimated from deposition in a mini-chamber, was 6 kcal/mol on Pt and 9 kcal/mol on the SrRuO 3 substrate. Therefore, the incorporation path of component oxide PbO, whose apparent activation energy was 31 kcal/mol on Pt and 29 kcal/mol on SrRuO 3 , essentially involved considerable gas-phase reaction. The PZT (50/50) thin film on SrRuO 3 bottom electrode possessed a lower coercive field and a smaller remnant polarization than that on Pt. The PZT capacitor on SrRuO 3 was also less vulnerable to polarization fatigue.Pb(Zr,Ti)O 3 thin films were deposited on SrRuO 3 /Si(001) and Pt/Ti/SiO 2 /Si(001) substrates in a barrel-type coldwall reactor under oxidizing atmosphere, using tetraethyl

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