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InN thin films having electrochromicproperties were prepared by activating reactive evaporation (ARE). Indium and nitrogen concentration in the film was 50 at% and 30-45 at%. Oxygen was contained in films at 5-20 at%. XPS (X-ray photoelectron spectroscopy) revealed that oxygen existed as In2O3, In(OH)3 and H2O. The effect of oxygen on the electrochromic properties of InN films was studied, and InN films with In2O3 alone did not show electrochromicity.In(OH)3 and H2O are important in demonstrating electrochromicity.