A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5 0-bis(3-dodecyl-2-thienyl)-2,2 0-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3 /Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 Â 10 4 , and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated. V