Chin-Ming Chao scite author profile

0. 13um and the cell density equals to 2.5 F2/bit, which is very Abstract-In this paper, we will propose a new NAND type small and competitive among the state-of-the-art data flash SONOS cell structure with high efficiency Source Side Injection memory. Since the cell structure is the fully self-aligned and programming and F-N erase. This cell is characterized in high free of source/drain junction, it is also highly scalable.

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Chin-Ming Chao

To improve the measure fail rate On SEM through six sigma DMAIC methodology — Chien-Hui Lu

A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances

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