We present in this paper the vertical integration of an electro-absorption modulator (EAM) onto a vertical-cavity surface-emitting laser (VCSEL). We discuss the design, fabrication, and measured characteristics of the combined VCSEL and EAM. We previously demonstrated a standalone EAM with an optical bandwidth around 30 GHz. In this paper we present for the first time an optical bandwidth of 30 GHz for an EAM integrated onto a VCSEL. This device exhibits single-mode operation and a very low chirp, below 0.1 nm, even with a modulation depth of 70% which makes this device very competitive for high-speed communications in data centers.

International audienceThis paper presents a new and efficient low-cost multi-layer 3D copper interconnect process for monolithic devices and passives. It relies on the BPN and SU-8 photoresists, associated with an optimized electroplating process to form multi-level 3D interconnects in a single metallization step. The SU-8 is used as a permanent thick dielectric layer which is patterned underneath specific locations to create the desired 3D interconnect shape. A 3D seed layer is deposited above the SU-8 and the substrate to insure 3D electroplating current flow. The BPN is used as a thick mold for copper electroplating with an aspect ratio as high as 16:1. An optimized 3D copper electroplating process is later used to grow 3D interconnects, insuring transition between all metallic layers. Finally, high-Q (55 @ 5 GHz) power inductors have been designed and integrated above a 50 W RF power LDMOS device, using this process

This paper presents a double-balanced downconverter based on a low duty-cycle passive mixer that translates a 18.8 GHz RF signal into a 1 GHz IF signal. The resistive mixer is driven by two analog specially designed pulse generators in order to provide very low conversion losses at high frequencies. The chip has been processed using a 0.13 µm BiCMOS technology. With a −1.2 dBm input LO power, the overall measured conversion gain is 13.2 dB with an estimated contribution of only −2.1 dB from the passive mixer. The measured noise figure is 6.3 dB. The inputreferred 1 dB compression point, hardly limited by the IF amp, is −25.7 dB, with −5 dBm for the mixer itself. Total power consumption is 109 mW.

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