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Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 μm, 50 μm, 100 μm to 200 μm has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its' deembed patterns. With the help of the direct double side probing system, wide band measurement of S-parameters of up to 40 GHz and eye-diagrams of 40 Gb/s signal are made to validate the modeled results.