We have mentioned a new fabrication for patterned retarder 3D display is presented. The main method mixed reactive monomer and photosensitive monomer and then used mask and UV light to achieve different odd retardation and even retardation. Compared with the conventional fabrication, we eliminate the PI process, decrease TACT time, and solvent less. Therefore, we don't need PI coating and PI rubbing process and then saved a lot of equipment and energy that be belong to green 3D display. Finally, we have succeeded to achieve without PI process for patterned retarder 3D display by our new materials development. P-128 / C.-W. Su SID 11 DIGEST • 1591

We have developed the method on the enhanced light emission of semiconductors with nanowire type In 2 O 3 films. The nanowire type In 2 O 3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In 2 O 3 film is more than several fold.

Surface-Roughing Method is effective to enhance the efficiency of the light emission of LEDs. We have developed a novel Furnace-Growing Technology of Surface-Roughing Method to enhance external quantum efficiency and control the grain size of Indium oxide (In 2 O 3 ) film on the top layer of GaN LEDs. The deposited Film of Indium oxide on GaNLEDs is crystallitic sharps and high uniformity of the thickness.

In this paper, we reported about 11.4 inch colorful transparent display in new Cholesteric Liquid Crystal (CLC) that can achieve lower operating voltage and good contrast ratio for bistable mode application. Finally, we also used the new CLC materials applied in 11.4 inch colorful reflective display.