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A photoinduced hybrid memory operating with a low voltage is demonstrated by embedding the fullerene derivative, [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM), into a conventional silicon‐channel FET with a nanogap, upon application of both electrical and optical pulses. The nanogap geometry allows high mobility, which is the same as that of conventional silicon and organic–inorganic hybrid integration without thermal instability.

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