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SrZrO 3 (SZO) thin films were deposited on (111) Pt/Ti/SiO2/Si substrates via metal organic decomposition method at different temperatures in flowing oxygen or nitrogen atmospheres. The microstructures of the films were characterized by x-ray diffraction. The dielectric properties and the leakage characteristics were investigated as well. The results showed that nitrogen ambient was helpful for the SZO films to crystallize into perovskite phase with polycrystalline structure. Meanwhile, the electric properties varying with annealing conditions were discussed in detail.

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