The high-frequency edge of the first-order Raman mode of diamond reflects the stress state at the culet of anvil, and is often used for the pressure calibration in diamond anvil cell (DAC) experiments. Here we point out that the high-frequency edge of the diamond Raman phonon corresponds to the Brillouin zone (BZ) center Γ point as a function of pressure. The diamond Raman pressure gauge relies on the stability of crystal lattice of diamond under high stress. Upon the diamond anvil occurs failure under the uniaxial stress (197 GPa), the loss of intensity of the first-order Raman phonon and a stress-dependent broad Raman band centered at 600 cm−1 are observed, which is associated with a strain-induced local mode corresponding to the BZ edge phonon of the L 1 transverse acoustic phonon branch.

High-pressure Raman scattering from hexagonal close-packed (HCP) metals Os and Re have been extended up to 200 GPa, and the pressure-dependent shear modulus C 44 has been deduced from the Raman-active mode E 2g , which is generated from the adjacent vibration of atoms in hexagonal planes, providing the valuable information about the elastic properties for HCP metals under high pressure. Combined with the available data of HCP metals from previous works, a further study indicates that the C 44 ′ / C 44 ratio would be close to a constant value, 0.01, with increasing atomic number of metals. The results obtained from high-pressure Raman scattering will allow us to probe the elastic anisotropy of the HCP metals at very high pressure.