The Pb(Zr 0.6 ,Ti 0.4 )O 3 (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO 2 (20nm)/SiO 2 /Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.
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