The applications of strontium titanium oxide based thermoelectric materials are currently limited by their high operating temperatures of >700 °C. Herein, we show that the thermal operating window of lanthanum strontium titanium oxide (LSTO) can be reduced to room temperature by the addition of a small amount of graphene. This increase in operating performance will enable future applications such as generators in vehicles and other sectors. The LSTO composites incorporated one percent or less of graphene and were sintered under an argon/hydrogen atmosphere. The resultant materials were reduced and possessed a multiphase structure with nanosized grains. The thermal conductivity of the nanocomposites decreased upon the addition of graphene, whereas the electrical conductivity and power factor both increased significantly. These factors, together with a moderate Seebeck coefficient, meant that a high power factor of ∼2500 μWm(-1)K(-2) was reached at room temperature at a loading of 0.6 wt % graphene. The highest thermoelectric figure of merit (ZT) was achieved when 0.6 wt % graphene was added (ZT = 0.42 at room temperature and 0.36 at 750 °C), with >280% enhancement compared to that of pure LSTO. A preliminary 7-couple device was produced using bismuth strontium cobalt oxide/graphene-LSTO pucks. This device had a Seebeck coefficient of ∼1500 μV/K and an open voltage of 600 mV at a mean temperature of 219 °C.

Ceramics based on SrLaTiNbO have been prepared by the mixed oxide route. The LaNbO component generates ∼13.4% A-site vacancies; this was fixed for all samples. Powders were sintered under air and reducing conditions at 1450 to 1700 K; products were of high density (>90% theoretical). Processing under reducing conditions led to the formation of a TiNbO second phase, core-shell structures and oxygen deficiency. X-ray diffraction (XRD) confirmed a simple cubic structure with space group Pm3[combining macron]m. Transmission electron microscopy revealed a high density of dislocations while analytical scanning transmission electron microscopy at atomic resolution demonstrated a uniform distribution of La, Nb and vacancies in the lattice. X-ray photoemission spectroscopy and thermogravimetry showed the oxygen deficiency (δ value) to be ∼0.08 in reduced samples with enhanced carrier concentrations ∼2 × 10 cm. Both carrier concentration and carrier mobility increased with sintering time, giving a maximum figure of merit (ZT) of 0.25. Selective additional doping by La or Nb, with no additional A site vacancies, led to the creation of additional carriers and reduced electrical resistivity. Together these led to enhanced ZT values of 0.345 at 1000 K. The contributions from oxygen vacancies and charge carriers have been investigated independently.

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