Multiple enhancement of the Stokes Raman scattering in grooved silicon structures, which consist of sequences of voids (grooves) and crystalline Si walls, was observed under excitation with wavelength close to the Si wall width of ∼1 μm. The results obtained are interpreted as a manifestation of the partial light localization within the grooved structures, which increases the effective volume of the medium interacting with excitation light. Based on this effect, we conclude that grooved silicon structures can act as a matrix for increasing the Raman scattering efficiency of different substances embedded into the grooves. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Multiple enhancement of the Raman scattering efficiency is observed in porous-silicon-based one-dimensional photonic bandgap (PBG) structures with tunable reflection and dispersion under excitation at 1.06 µm. The experimental results are explained as being due to the resonant increase in the effective Raman susceptibility at light wavelengths close to the PBG edges. This effect is discussed in view of possible applications in the Raman spectroscopy of molecules embedded in porous media as well as in the Raman laser based on silicon.

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