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The use of strained pseudomorphic InGaAs channels grown on InP substrate [6,7] have shown improved device properties over latticematched channels due to reduced carrier scattering as a result Of better confinement (larger conduction band discontinuity) and increased two-dimension electron gas (~-D E G ) sheet charge density, However, there was little noise figure and gain performance reported for the pseudomorphic InP HEMTs. This paper reports performance of o.l morphic InAIAs/lnGaAs/lnP HEMT devices. The performance of a two-stage W-band hybrid LNA fabricated using these devices is also presented. ABSTRACT We report the W-band and D-band performance of 0.1 micron T-gate pseudomorphic ln0.~3A10.47As/ln0.6oGao.4oAs/ InP High Electron Mobility Transistors (HEMTs). The device achieved 1.3 dB noise figure and 8.2 dB associated gain when biased and tuned for minimum noise figure at 95 GHz. It achieved 7.3GHz. This is the highest gain ever reported for a three-terminal semiconductor device in this frequency range. The two-stage hybrid LNA fabricated with these devices demonstrated a minimum noise figure of 2.6 dB and 14.2 dB associated gain at waveguide interface at 92 dB gain when biased and tuned for gain at I 4 l . 5 the fabrication and measured W-band and D-band T-gate pseudoGHz. This is the lowest-reported noise figure for a two-stage LNA at this frequency.

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This paper presents the results of two GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-_tm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-.dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-l.tm gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

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