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Small-angle scattering (SAS) experiments on SI GaAs crystals reveal that: (i) in GaAs there exist two regions of altered optical properties surrounding dislocations, the inner region having a radius of 5 p m and the outer region a radius 30-40,um; (ii) these regions are formed by As-related defects such as V G ~, As, and AsG.; the inhomogeneities in question contain centres with an ionisation energy 0.1 -0.2 eV and quite shallow centres a s well. These inhomogeneities give rise to a considerable conductivity dependence on frequency.