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The electrical resistance of Bi and Bi-6 at.% Sb whiskers has been measured. Sample diameters were as low as 140 nm, lengths as large as 1.5 mm, and residual resistances as high as 165 k£2. Down to temperatures of 0.4 K, metallic behavior persists; the resistance R decreases with decreasing temperature T in contrast to other systems in which electron localization is invoked to explain negative dR/dT's.

We have measured the effect of elastic stress to 0.3 kbar on the resistance at room and helium temperatures and on the superconducting transition temperature of In whiskers. These whiskers have diameters of about 1 v and axes parallel to a closest-packed or <101> direction. dT c /da is 51±7 mK/kbar, in disagreement with results obtained by measuring the change in length of In crystals as they pass through the superconducting transition. At room temperature, Ap/pa=a- {-b(r ) where a= (-0.4±0.2)X10~5 bars" 1 and b= (14±2)X10-9 bar" 2 .

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