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Index Terms-GaN, high electron-mobility transistor (HEMT), -band, microwave noise, microwave power.

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In this paper, we report on the power and noise performance of AlGaN/GaN HEWS in the K (18 -27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33 % has been achieved on a 8-finger 0.2 pm x 500 pm device. Minimum noise figure of 1.4 dl3 has been achieved on a 0.15 pm x 200 pm device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.