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We will give an account of our investigation on structure property relationships of amines with regards to line width roughness (LWR) and line edge roughness (LER) of a 193 nm alicyclic-acrylate resist. Specifically, we have looked at basicity, molar volume and logD as factors which may have an influence of roughness of 80 nm 1:1 L/S features. For relatively hydrophobic amines (Log D > -1), the lower the hydrophilicity at acidic pH the greater the LER and LWR becomes. Specifically, in this range of Log D, more hydrophobic larger amines, with higher basicity, tend to give worse L/S feature roughness. For amines which are more hydrophilic, the relationship becomes more complex with some amines giving a lower LER while others do not. This appears to be predicated on a delicate balance between basicity, hydrophilicy and size.

Keywords: 157 nm lithography, 157 nm photoresist, amine barrier coat ABSTRACTWe summarize our work on devising protective barrier coats for use against airborne contamination when using tertbutoxycarbonylmethyl (BOCME) capped fluoroalcohol resist resins as part of our strategy to develop a 157 nm resist platform. We will describe how a barrier coat (AZ® EXP FX Coating 145) consisting of a fluoroc-yclopolymer formulation, soluble in aqueous developer, can improve the post-exposure delay (PED) latitude of 157 nm resist resists exposed under conditions or airborne contamination. Specifically, a 20 nm thick coating of AZ® EXP FX Coating 145 gives a PED latitude for L/S features of at least 10 min under condition of airborne amine contamination (10 ppb amine contamination). The barrier coat, AZ® EXP FX coating 145 is formulated in a solvent which is compatible with resist film coated from typical 193 nm resist spin casting solvents. Moreover, it can be easily removed as part of the normal aqueous base development scheme, no extra post-apply bake or stripping step is required.

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