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B ack Gate A new planar split dual gate MOSFET device (PSDG MOSFET) is reported for the first time. The theoretical calculation, 3D device Cotitact simulation as well as the experiment data show that with the two Sour independent split dual gates in PSDG MOSFET, it can provide dynamical control of the device characteristics, such as threshold voltage (Vt) and sub-threshold swing (SS) as well as the Idsat of the device.