No abstract

Thin-film amorphous silicon electrodes, subjected to various pretreatment have been tested in galvanostatic and potenciodynamic modes. Preliminary heat treatment of silicon electrodes in nitrogen atmosphere was established to lead to some decrease in discharge capacity and insignificant decrease in degradation upon cycling. Preliminary annealing of silicon electrodes in vacuum at 480°C results in increase of discharge capacity and some decrease of degradation upon cycling. Silicon electrodes with thickness about 1 micron annealed in vacuum have discharge capacity about 1200 mA·h/g.

Structure of thin-film electrodes manufactured by layer-by-layer magnetron sputtering of Si and Al in the environment with small oxygen additives has been studied. Charge-discharge behavior of these electrodes was studied as well. It is shown that such electrodes are able to stable cycling with marginal irreversible capacity.