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Among the transparent conductor, one of the most interesting is the Al doped MgxZn1−xO films for their electrical properties that make it very attracting for solar cell application. In this work, the Mg distribution in Al doped MgxZn1−xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X‐ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique. Copyright © 2014 John Wiley & Sons, Ltd.

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We present excellent performance and reliability characteristics of a Silicon nanocrystal (Si-nc) 4 Mb NOR Flash array (90nm technology node). Main original technological improvements are a cylindrical symmetry of the 1-Transistor bitcell, which significantly increases the coupling ratio (particularly critical in Si-nc memories), and the use of an optimized ONO control dielectric, which prevents from parasitic charge trapping during cycling. Results shown here in terms of memory performance, high temperature reliability, endurance and disturbs are, at our knowledge, outstanding compared to literature state-of-theart and demonstrate the high potential of this technology for embedded memory applications.