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Linear and nonlinear internal photoemission in a thin-film metal-insulator-metal heterosystem, i.e., a Ta-TaOx-Ag junction, together with surface reflectivity are mapped with a lateral resolution of better than 5 μm. The spatial correlation of the different signals and time-resolved internal photoemission spectroscopy reveal excitation mechanisms and ballistic hot carrier injection. The internal photoemission yield variation with Ag layer thickness is quantitatively explained by above-barrier injection. The hot-spot-like behavior of the two-photon induced internal photoemission observed for short pulse excitation is attributed to local field enhancements because of Ag-film thickness reduction and plasmonic effects at structural defects.

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Abstract. Spectral interferometry of the backscattered radiation reveals coherence lifetimes of about 150 fs for nanolocalized electromagnetic modes in textured layered nanostructures as they are commonly used in thin film photovoltaics to achieve high cell efficiencies.